技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 23A (Ta), 180A (Tc)
• Rds On (Max) @ Id, Vgs 1mOhm @ 38A, 10V
• Power Dissipation (Max) 820mW (Ta), 52W (Tc)
• Vgs(th) (Max) @ Id 2V @ 934µA
• Supplier Device Package 8-PQFN (3.3x3.3)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) +16V, -12V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 4040 pF @ 13 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant