• 库存 1604
定价:
  • 1 13.19

技术参数

  • Package / Case TO-247-4
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 37A (Tc)
  • Rds On (Max) @ Id, Vgs 100mOhm @ 15A, 20V
  • Power Dissipation (Max) 200W (Tc)
  • Vgs(th) (Max) @ Id 2.8V @ 1mA
  • Supplier Device Package TO-247-4
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +23V, -10V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 64 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 838 pF @ 1000 V
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • REACH Status REACH Unaffected

相关产品


SICFET N-CH 1200V 30A TO247-4L

库存: 2587

  • 1: 20.97
  • 30: 17.39
  • 120: 16.3
  • 510: 13.91

75M 1200V 175C SIC FET

库存: 1819

  • 1: 19.68
  • 30: 15.93
  • 120: 15
  • 510: 13.59

SIC MOSFET N-CH 61A TO247-4

库存: 2204

  • 1: 33.07

SIC MOSFET N-CH 41A TO247-3

库存: 4929

  • 1: 10.5

SIC MOSFET N-CH 41A TO247-4

库存: 2206

  • 1: 10.77

SICFET N-CH 1.2KV 36A TO247-4

库存: 1761

  • 1: 11.58
  • 30: 9.37
  • 120: 8.82
  • 510: 7.99
  • 1020: 7.33

TRANS SJT N-CH 1200V 103A TO247

库存: 1500

  • 1: 41.33

SICFET N-CH 1200V 37A TO247-3

库存: 1604

  • 1: 12.8

SICFET N-CH 1200V 29A TO247-4

库存: 1930

  • 1: 28.09
  • 30: 23.29
  • 120: 21.83
  • 510: 18.63

SILICON CARBIDE POWER MOSFET 120

库存: 2100

  • 1: 31.6
  • 10: 29.14
  • 30: 27.83
  • 120: 24.89
  • 270: 23.74
Top