技术参数

• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Mounting Type Surface Mount
• Operating Temperature 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 30A (Tc)
• Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V
• Power Dissipation (Max) 159W
• Vgs(th) (Max) @ Id 5.6V @ 5mA
• Supplier Device Package TO-263-7
• Vgs (Max) +22V, -4V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 60 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant