技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Tc)
• Rds On (Max) @ Id, Vgs 800mOhm @ 1A, 10V
• Power Dissipation (Max) 1.8W (Ta)
• Vgs(th) (Max) @ Id 1V @ 380µA
• Supplier Device Package PG-SOT223-4
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 372 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant