- 产品型号 RFN1LAM6STR
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 DIODE GEN PURP 600V 800MA PMDTM
- 分类 单二极管
-
PDF
- 库存 11197
定价:
- 3000 0.09
- 6000 0.09
- 9000 0.08
- 30000 0.08
- 75000 0.07
- 150000 0.06
技术参数
- Package / Case SOD-128
- Mounting Type Surface Mount
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 35 ns
- Technology Standard
- Current - Average Rectified (Io) 800mA
- Supplier Device Package PMDTM
- Operating Temperature - Junction 150°C (Max)
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.45 V @ 800 mA
- Current - Reverse Leakage @ Vr 1 µA @ 600 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
